| 6327258 |
Synonym:triethylsilane, hydride, silane, triethyl, triethylhydrosilane, triethylsilyl, silane e3h, c6h16si, triethylsilyl radical, silane, triethyl-,, triethylsilane tes
| Color | Colorless |
| Boiling Point | 108°C |
| UN Number | 1993 |
| Formula Weight | 116.28 |
| Physical Form | Clear Liquid at 20°C |
| Chemical Name or Material | Triethylsilane |
| Appearance | N/A |
| Content of Zinc | N/A |
| Boiling Point | N / A |
| Melting Point | N/A |
| Vapor Pressure | N/A |
| % Volatile by Weight | N/A |
| Solubility in Water | N/A |
| Density | N/A |
| pH of Liquid, Typical (10% soln) | N/A |
| Specific Gravity Approx | N/A |
| Odor | N/A |
| pH | N/A |
| Flash Point | N/A |
| Ignition temperature | N/A |
| Lower exposure limit | N/A |
| Upper exposure limit | N/A |
Classification of the substance or mixture
GHS Label elements, including precautionary statements
Hazards not otherwise classified (HNOC) or not covered by GHS
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The organosilicon chemical triethylsilane has the molecular formula C₆H₁₆Si. Commonly employed as a reducing agent and as a precursor in organic synthesis, particularly for hydrosilylation reactions and the generation of silyl ethers, it is a colourless, clear liquid.
Triethylsilane's chemical formula is C₆H₁₆Si. Often shown as (C2H5)3SiH, its structure comprises a silicon atom linked to three ethyl groups and one hydrogen atom.
A colourless liquid, triethylsilane has a boiling point of around 107–109 °C, a melting temperature of 157 °C, and a density of about 0.73 g/cm³. Stable yet susceptible to moisture, it is very combustible, has fairly low viscosity and surface tension, and is stable.
Though non-polar solvents including hydrocarbons, halocarbons, and ethers may dissolve triethylsilane, water renders it insoluble. Water, acids, and bases cause it to react and create very flammable hydrogen gas.
In organic synthesis, triethylsilane is often employed as a moderate reducing agent; in hydrosilylation processes, too. It is used to make silicone rubbers, gels, inks, water repellents, and interface agents; it also acts as a precursor for vapour deposition techniques (CVD, PECVD).
