| Boiling Point | 70°C |
| Melting Point | −10°C |
| Density | 0.786 g/mL (lit.) |
| Linear Formula | SiH2[N(CH2CH3)2]2 |
| Physical Form | Liquid |
| Total Trace Metal Impurities | ≤100 ppm trace metals basis |
| Assay | ≥98% (qNMR), ≥99.99% trace metals basis (99.99%-Si) |
| CAS Number | 27804-64-4 |
| UNSPSC Code | 12352103 |
| MDL Number | MFCD19105220 |
| Applications | Semiconductor device manufacturing — BDEAS is a high-purity silicon precursor for atomic layer deposition (ALD) and chemical vapor deposition (CVD), used to deposit silicon oxide (SiO2) and silicon nitride (SiNx) films as insulating/passivation/dielectric layers in microelectronics |
BDEAS is an organosilicon compound with two diethylamino ligands attached to a silicon-hydride center. Its ultra-high purity (≥99.99% trace metals basis) and balanced thermal stability/reactivity make it a preferred silicon source for depositing ultrathin, high-quality films in modern semiconductor fabrication.
This compound is manufactured into semiconductor devices as an ALD/CVD precursor, depositing silicon oxide and silicon nitride films that serve as insulating, passivation, and low-k dielectric layers — critical to advanced chip manufacturing, including 3D ICs and next-generation chip packaging.
